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Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

✍ Scribed by Medjdoub, F.; Zegaoui, M.; Rolland, N.; Rolland, P. A.

Book ID: 120088118
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 797 KB
Volume: 98
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3595943

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