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Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)

✍ Scribed by Poblenz, C.; Waltereit, P.; Rajan, S.; Mishra, U. K.; Speck, J. S.; Chin, P.; Smorchkova, I.; Heying, B.

No coin nor oath required. For personal study only.

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