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Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

✍ Scribed by Haffouz, S.; Tang, H.; Rolfe, S.; Bardwell, J. A.

Book ID: 121817757
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 432 KB
Volume: 88
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2215600

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