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Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

✍ Scribed by M. A. Sánchez-García; E. Calleja; F. J. Sanchez; F. Calle; E. Monroy; D. Basak; E. Muñoz; C. Villar; A. Sanz-Hervas; M. Aguilar; J. J. Serrano; J. M. Blanco

Book ID: 107457810
Publisher: Springer US
Year: 1998
Tongue: English
Weight: 614 KB
Volume: 27
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-998-0399-2

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