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High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy

✍ Scribed by G. Kipshidze; S. Nikishin; V. Kuryatkov; K. Choi; Ìu. Gherasoiu; T. Prokofyeva; M. Holtz; H. Temkin; K. D. Hobart; F. J. Kub; M. Fatemi

Book ID: 107452630
Publisher: Springer US
Year: 2001
Tongue: English
Weight: 320 KB
Volume: 30
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-001-0065-4

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