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Heterointerface Control and Epitaxial Growth of 3C-SiC on Si by Gas Source Molecular Beam Epitaxy

✍ Scribed by T. Fuyuki; T. Hatayama; H. Matsunami

Publisher: John Wiley and Sons
Year: 1997
Tongue: English
Weight: 600 KB
Volume: 202
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(199707)202:1<359::aid-pssb359>3.0.co;2-a

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