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Growth and Characterization of High Quality Continuous GaN Films on Si-Doped Cracked GaN Templates

โœ Scribed by Chua, S.J. ;Hao, M. ;Zhang, J. ;Sia, E.K.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
223 KB
Volume
188
Category
Article
ISSN
0031-8965

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โœ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 169 KB ๐Ÿ‘ 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1ยฑ ยฑx N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality