✦ LIBER ✦
Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor
✍ Scribed by Yamaguchi, S. ;Kosaki, M. ;Watanabe, Y. ;Mochizuki, S. ;Nakamura, T. ;Yukawa, Y. ;Nitta, S. ;Amano, H. ;Akasaki, I.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 97 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
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