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Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

✍ Scribed by Cordier, Yvon; Moreno, Jean-Christophe; Baron, Nicolas; Frayssinet, Eric; Chenot, SÉbastien; Damilano, Benjamin; Semond, Fabrice

Book ID: 121816065
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 239 KB
Volume: 29
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2005211

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