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Electrical measurements of an AlGaN/GaN high-electron-mobility transistor structure grown on Si

✍ Scribed by Zhi-Yao Zhang, Shun-Tsung Lo, Li-Hung Lin, Kuang Yao Chen, J. Z. Huang, Zhi-Hao Sun, C. -T. Liang, N. C. Chen, Chin-An Chang, P. H. Chang

Book ID: 119937024
Publisher: The Korean Physical Society
Year: 2012
Tongue: English
Weight: 226 KB
Volume: 61
Category: Article
ISSN: 0374-4884
DOI: 10.3938/jkps.61.1471

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