## Abstract AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a nov
Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
β Scribed by Zhang, Yifei; Singh, Jasprit
- Book ID
- 111682911
- Publisher
- American Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 413 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.369493
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