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AlGaN/GaN high electron mobility transistors for protein–peptide binding affinity study

✍ Scribed by Chih-Cheng Huang; Geng-Yen Lee; Jen-Inn Chyi; Hui-Teng Cheng; Chen-Pin Hsu; You-Ren Hsu; Chia-Hsien Hsu; Yu-Fen Huang; Yuh-Chang Sun; Chih-Chen Chen; Sheng-Shian Li; J. Andrew Yeh; Da-Jeng Yao; Fan Ren; Yu-Lin Wang


Book ID
119199999
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
627 KB
Volume
41
Category
Article
ISSN
0956-5663

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## Abstract We present an optical study on three Al~__x__~ Ga~1–__x__~ N/GaN high electron mobility transistor structures, which were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates, with different Al compositions using contactless electroreflectance (CER), piezorefle