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Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

✍ Scribed by Radhakrishnan, K.; Dharmarasu, N.; Sun, Z.; Arulkumaran, S.; Ng, G. I.

Book ID: 120179040
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 383 KB
Volume: 97
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3518717

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