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High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

✍ Scribed by Skierbiszewski, C.; Dybko, K.; Knap, W.; Siekacz, M.; Krupczyński, W.; Nowak, G.; Boćkowski, M.; Łusakowski, J.; Wasilewski, Z. R.; Maude, D.; Suski, T.; Porowski, S.


Book ID
120479967
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
327 KB
Volume
86
Category
Article
ISSN
0003-6951

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## Abstract Transport properties of the two‐dimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecular‐beam epitaxy are experimentally investigated. Conventional Hall and Shubnikov–de Haas measurements as well as investigations of quantum transport phenomena are reported. It