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AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

✍ Scribed by Smorchkova, I. P.; Chen, L.; Mates, T.; Shen, L.; Heikman, S.; Moran, B.; Keller, S.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K.

Book ID: 120462828
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 453 KB
Volume: 90
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1412273

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## Abstract Transport properties of the two‐dimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecular‐beam epitaxy are experimentally investigated. Conventional Hall and Shubnikov–de Haas measurements as well as investigations of quantum transport phenomena are reported. It