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Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

✍ Scribed by T. Kitamura; Y. Ishida; X.Q. Shen; H. Nakanishi; S.F. Chichibu; M. Shimizu; H. Okumura

No coin nor oath required. For personal study only.

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