High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

✍ Scribed by Miyoshi, M.; Ishikawa, H.; Egawa, T.; Asai, K.; Mouri, M.; Shibata, T.; Tanaka, M.; Oda, O.

• Book ID: 120479966
• Publisher: American Institute of Physics
• Year: 2004
• Tongue: English
• Weight: 333 KB
• Volume: 85
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1790073