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Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

✍ Scribed by Smorchkova, I. P.; Elsass, C. R.; Ibbetson, J. P.; Vetury, R.; Heying, B.; Fini, P.; Haus, E.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K.

Book ID: 120178368
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 336 KB
Volume: 86
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.371396

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## Abstract Transport properties of the two‐dimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecular‐beam epitaxy are experimentally investigated. Conventional Hall and Shubnikov–de Haas measurements as well as investigations of quantum transport phenomena are reported. It