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Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates

✍ Scribed by D. F. Storm; D. S. Katzer; J. A. Mittereder; S. C. Binari; B. V. Shanabrook; L. Zhou; D. J. Smith; X. Xu; D. Mcvey; R. P. Vaudo; G. R. Brandes


Book ID
121817409
Publisher
AVS (American Vacuum Society)
Year
2005
Tongue
English
Weight
491 KB
Volume
23
Category
Article
ISSN
0734-211X

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InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t