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On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

✍ Scribed by Alloing, B.; VeÌzian, S.; Tottereau, O.; VenneÌgueÌs, P.; Beraudo, E.; Zuniga-PeÌrez, J.

Book ID: 121010551
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 858 KB
Volume: 98
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3525170

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