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Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)

✍ Scribed by Peta, Koteswara Rao; Lee, Sang-Tae; Moon-Deock, Kim; Oh, Jae-Eung; Kim, Song-Gang; Kim, Tae-Geun

Book ID: 121779668
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 626 KB
Volume: 378
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.12.118

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