High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

✍ Scribed by Nikishin, S. A.; Faleev, N. N.; Antipov, V. G.; Francoeur, S.; Grave de Peralta, L.; Seryogin, G. A.; Temkin, H.; Prokofyeva, T. I.; Holtz, M.; Chu, S. N. G.

• Book ID: 121498020
• Publisher: American Institute of Physics
• Year: 1999
• Tongue: English
• Weight: 322 KB
• Volume: 75
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.124920