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Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy

✍ Scribed by Chen, Hung-Ying; Lin, Hon-Way; Shen, Chang-Hong; Gwo, Shangjr


Book ID
121480137
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
463 KB
Volume
89
Category
Article
ISSN
0003-6951

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