✦ LIBER ✦

Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy

✍ Scribed by Chen, G. D.; Smith, M.; Lin, J. Y.; Jiang, H. X.; Salvador, A.; Sverdlov, B. N.; Botchkarv, A.; Morkoc, H.

Book ID: 121084570
Publisher: American Institute of Physics
Year: 1996
Tongue: English
Weight: 473 KB
Volume: 79
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.361138

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structure and photoluminescence properti

Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy

✍ Chen, Hung-Ying; Lin, Hon-Way; Shen, Chang-Hong; Gwo, Shangjr 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 463 KB

Effect of growth temperature on defects

Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

✍ Kushvaha, S. S.; Pal, P.; Shukla, A. K.; Joshi, Amish G.; Gupta, Govind; Kumar, 📂 Article 📅 2014 🏛 American Institute of Physics 🌐 English ⚖ 969 KB

Spectroscopic and magnetic properties of

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

✍ R. Vidyasagar; Y.-T. Lin; L.-W. Tu 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 907 KB

Studies on the InGaGdN/GaN magnetic semi

Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy

✍ S.N.M. Tawil; D. Krishnamurthy; R. Kakimi; S. Emura; S. Hasegawa; H. Asahi 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 348 KB

InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0 0 0 1) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or

Photoluminescence properties of p-type I

Photoluminescence properties of p-type InGaAsN grown by rf plasma-assisted molecular beam epitaxy

✍ Xie, S. Y.; Yoon, S. F.; Wang, S. Z. 📂 Article 📅 2005 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 274 KB

Polarity of GaN nanowires grown by plasm

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

✍ Hestroffer, Karine; Leclere, Cédric; Bougerol, Catherine; Renevier, Hubert; Daud 📂 Article 📅 2011 🏛 The American Physical Society 🌐 English ⚖ 496 KB