A growth window for the Mn effusion cell temperature (T Mn ) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at T Mn ΒΌ 700
Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy
β Scribed by R. Vidyasagar; Y.-T. Lin; L.-W. Tu
- Book ID
- 119322666
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 907 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0025-5408
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π SIMILAR VOLUMES
## Abstract With the material quality of undoped indium nitride significantly improved, attention has more recently turned towards achieving control of the electrical properties of this infrared bandgap semiconductor. Of the candidate acceptors, only Mg has been reported in detail, primarily as it
a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe