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Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy

✍ Scribed by Z. Yang; Z. Zuo; H.M. Zhou; W.P. Beyermann; J.L. Liu

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
682 KB
Volume
314
Category
Article
ISSN
0022-0248

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✦ Synopsis

A growth window for the Mn effusion cell temperature (T Mn ) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at T Mn ΒΌ 700 1C. The Curie temperature of these MnZnO diluted magnetic semiconductor thin films is above roomtemperature. The ferromagnetism is weakly anisotropic. Well-resolved near-band-edge photoluminescence emissions dominate the spectra at both low-and room-temperatures. No evident spin polarization on the carriers was detected with the magneto-photoluminescence studies. Magnetoresistance and anomalous Hall effects of the MnZnO thin films were studied. The anomalous Hall coefficient shows a quadratic dependence on the resistivity.

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