a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe
Effects of depositing rate on structure and magnetic properties of Mn:TiO2 films grown by plasma-assisted molecular beam epitaxy
β Scribed by X.Y. Li; S.X. Wu; L.M. Xu; C.T. Li; Y.J. Liu; X.J. Xing; S.W. Li
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 542 KB
- Volume
- 156
- Category
- Article
- ISSN
- 0921-5107
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