Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy

✍ Scribed by Ta-Chun Ma; Yan-Ting Lin; Hao-Hsiung Lin

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 234 KB
• Volume: 318
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.11.057

✦ Synopsis

We report the effects of plasma species on the N incorporation of GaAsSbN. Optical emission spectroscopy and quadruple mass spectroscopy were used to characterize the plasma source. We found a simple correlation between the atomic N species and meta-stable molecular N 2 * species that is independent of plasma power and N 2 flow rate. In order to achieve atomic-N-rich growth conditions, we place a PBN shutter in front of our plasma source, rich in meta-stable N 2 * molecules, to facilitate the relaxation of N * and turn the growth condition into an atomic-N-dominant one. When an atomic-N-rich condition is used, N incorporation rate decreases when Sb flux increases and increases as growth temperature increases. This behavior is well explained by a surface kinetics model. When a N 2 * -rich condition is used, the N incorporation in GaAsSbN is enhanced by increase in Sb flux and growth temperature.