✦ LIBER ✦

Optical and Structural Characterization of Ga(In)N Three-Dimensional Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

✍ Scribed by G. Pozina; J.P. Bergman; B. Monemar; V.V. Mamutin; T.V. Shubina; V.A. Vekshin; A.A. Toropov; S.V. Ivanov; M. Karlsteen; M. Willander

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 184 KB
Volume: 216
Category: Article
ISSN: 0370-1972
DOI: 10.1002/(sici)1521-3951(199911)216:1<445::aid-pssb445>3.0.co;2-k

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Absorption and Emission of (In,Ga)N/GaN

Absorption and Emission of (In,Ga)N/GaN Quantum Wells Grown by Molecular Beam Epitaxy

✍ Siozade, L. ;Disseix, P. ;Vasson, A. ;Leymarie, J. ;Damilano, B. ;Grandjean, N. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 85 KB 👁 1 views

Growth and Characterization of InGaN/GaN

Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy

✍ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 101 KB 👁 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t

Indium Surface Segregation during Growth

Indium Surface Segregation during Growth of (In,Ga)N/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy

✍ P. Waltereit; O. Brandt; K.H. Ploog; M.A. Tagliente; L. Tapfer 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 94 KB 👁 1 views

Comparison of the Mechanism of Optical A

Comparison of the Mechanism of Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy and MOCVD

✍ Holst, J. ;Kaschner, A. ;Gfug, U. ;Hoffmann, A. ;Thomsen, C. ;Bertram, F. ;Riema 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 1 views