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Comparison of the Mechanism of Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy and MOCVD

✍ Scribed by Holst, J. ;Kaschner, A. ;Gfug, U. ;Hoffmann, A. ;Thomsen, C. ;Bertram, F. ;Riemann, T. ;Rudloff, D. ;Fischer, P. ;Christen, J. ;Averbeck, R. ;Riechert, H. ;Heuken, M. ;Schwambera, M. ;Sch�n, O.

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 117 KB
Volume: 180
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200007)180:1<327::aid-pssa327>3.0.co;2-r

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