A growth window for the Mn effusion cell temperature (T Mn ) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at T Mn ΒΌ 700
β¦ LIBER β¦
Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy
β Scribed by Chihiro Harada; Hang-Ju Ko; Hisao Makino; Takafumi Yao
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 207 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1369-8001
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