✦ LIBER ✦

Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy

✍ Scribed by S.N.M. Tawil; D. Krishnamurthy; R. Kakimi; S. Emura; S. Hasegawa; H. Asahi

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 348 KB
Volume: 323
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.11.166

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✦ Synopsis

InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0 0 0 1) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or InN and the Gd atom occupation at the group-III site. Magnetization versus magnetic field curves exhibited clear hysteresis and saturation at both 10 and 300 K. The InGaGdN/GaN SL sample showed higher saturation magnetization per volume than the InGaGdN single-layer sample.

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