a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe
GaN quantum dots grown on non-polar a-plane SiC by plasma-assisted molecular beam epitaxy
โ Scribed by S. Founta; F. Rol; T. Andreev; B. Gayral; E. Bellet-Amalric; C. Moisson; H. Mariette; B. Daudin
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 185 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t
InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0 0 0 1) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or