๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

GaN quantum dots grown on non-polar a-plane SiC by plasma-assisted molecular beam epitaxy

โœ Scribed by S. Founta; F. Rol; T. Andreev; B. Gayral; E. Bellet-Amalric; C. Moisson; H. Mariette; B. Daudin


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
185 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Electrical properties of GaN grown on a-
โœ Jongmin Kim; Keun Man Song; Seong Ju Bae; Chan Soo Shin; Chul Gi Ko; Bo Hyun Kon ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 859 KB

a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe

Growth and Characterization of InGaN/GaN
โœ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 101 KB ๐Ÿ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t

Studies on the InGaGdN/GaN magnetic semi
โœ S.N.M. Tawil; D. Krishnamurthy; R. Kakimi; S. Emura; S. Hasegawa; H. Asahi ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 348 KB

InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0 0 0 1) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or