Structural and magnetic properties of Mn:TiO2 films grown by plasma-assisted molecular beam epitaxy
β Scribed by X.Y. Li; J.R. Xiao; Z.Y. Wang; S.W. Li
- Book ID
- 116760376
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 385 KB
- Volume
- 177
- Category
- Article
- ISSN
- 0921-5107
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π SIMILAR VOLUMES
A growth window for the Mn effusion cell temperature (T Mn ) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at T Mn ΒΌ 700
## Abstract With the material quality of undoped indium nitride significantly improved, attention has more recently turned towards achieving control of the electrical properties of this infrared bandgap semiconductor. Of the candidate acceptors, only Mg has been reported in detail, primarily as it