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Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

✍ Scribed by Kushvaha, S. S.; Pal, P.; Shukla, A. K.; Joshi, Amish G.; Gupta, Govind; Kumar, M.; Singh, S.; Gupta, Bipin K.; Haranath, D.

Book ID: 121826449
Publisher: American Institute of Physics
Year: 2014
Tongue: English
Weight: 969 KB
Volume: 4
Category: Article
ISSN: 2158-3226
DOI: 10.1063/1.4866445

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