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AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy

✍ Scribed by Micovic, M.; Kurdoghlian, A.; Janke, P.; Hashimoto, P.; Wong, D.W.S.; Moon, J.S.; McCray, L.; Chanh Nguyen

Book ID
114538610
Publisher
IEEE
Year
2001
Tongue
English
Weight
98 KB
Volume
48
Category
Article
ISSN
0018-9383

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