Zinc blende GaN grown by radio frequency plasma assisted molecular beam epitaxy
โ Scribed by H.D. Cho; N.H. Ko; S.H. Park; T.W. Kang; J.W. Han; K.S. Eom; S.H. Won; K.S. Jung
- Book ID
- 108342346
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 285 KB
- Volume
- 175-176
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe
InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0 0 0 1) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or