Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy
β Scribed by Mahesh Kumar; T. N. Bhat; M. K. Rajpalke; B. Roul; P. Misra; L. M. Kukreja; Neeraj Sinha; A. T. Kalghatgi; S. B. Krupanidhi
- Book ID
- 107582310
- Publisher
- Springer-Verlag
- Year
- 2010
- Tongue
- English
- Weight
- 866 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0250-4707
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π SIMILAR VOLUMES
## Abstract With the material quality of undoped indium nitride significantly improved, attention has more recently turned towards achieving control of the electrical properties of this infrared bandgap semiconductor. Of the candidate acceptors, only Mg has been reported in detail, primarily as it
## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by Xβray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam
a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe
## Abstract The surface kinetics of InN growth on GaN(0001) by plasma assisted molecular beam epitaxy was investigated. The surface coverage of the GaN(0001) surface by InN islands and the corresponding islands' growth rate along the [0001] direction, were studied as a function of substrate tempera