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Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy

✍ Scribed by R.R. Lieten; O. Richard; S. Degroote; M. Leys; H. Bender; G. Borghs

Book ID: 108166202
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 964 KB
Volume: 314
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.10.146

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Interface of GaN grown on Ge(1&#xa0;1&#xa0;1) by plasma assisted molecular beam epitaxy

Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy