We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 Â 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was
GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(1 1 1) by molecular beam epitaxy
✍ Scribed by Pinar Dogan; Oliver Brandt; Carsten Pfüller; Anne-Kathrin Bluhm; Lutz Geelhaar; Henning Riechert
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 652 KB
- Volume
- 323
- Category
- Article
- ISSN
- 0022-0248
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