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Investigation of InN layers grown by molecular beam epitaxy on GaN templates

✍ Scribed by Vilalta-Clemente, A. ;Mutta, G. R. ;Chauvat, M. P. ;Morales, M. ;Doualan, J. L. ;Ruterana, P. ;Grandal, J. ;Sánchez-García, M. A. ;Calle, F. ;Valcheva, E. ;Kirilov, K.

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
232 KB
Volume
207
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility.

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a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe