✦ LIBER ✦

Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy

✍ Scribed by Skierbiszewski, C. ;Wasilewski, Z. ;Siekacz, M. ;Feduniewicz, A. ;Pastuszka, B. ;Grzegory, I. ;Leszczynski, M. ;Porowski, S.

Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 176 KB
Volume: 201
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200303961

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Nonalloyed ohmic contact of AlGaN/GaN HE

Nonalloyed ohmic contact of AlGaN/GaN HEMTs by selective area growth of single-crystal n+-GaN using plasma assisted molecular beam epitaxy

✍ Zheng, Zhi ;Seo, Huichan ;Pang, Liang ;Kim, Kyekyoon Kevin 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 404 KB

## Abstract Selective area growth (SAG) based on plasma assisted molecular beam epitaxy (PAMBE) was demonstrated to be effective to achieve low contact resistance for nonalloyed ohmic metals. An AlGaN/GaN high‐electron mobility transistor (HEMT) using SAG by PAMBE with nonalloyed ohmic metals and r

Growth and Characterization of InGaN/GaN

Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy

✍ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 101 KB 👁 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t

Growth of Strain Free GaN Layers on 6H-S

Growth of Strain Free GaN Layers on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy

✍ K. Jeganathan; M. Shimizu; H. Okumura 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 95 KB

Heteroepitaxial Growth of GaN on 6H-SiC(

Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

✍ Waltereit, P. ;Lim, S.-H. ;McLaurin, M. ;Speck, J.S. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 174 KB 👁 1 views

Selective-area growth and fabrication of

Selective-area growth and fabrication of recessed-gate GaN MESFET using plasma-assisted molecular beam epitaxy

✍ Hong, Seung Jae ;Chapman, Patrick ;Krein, Philip T. ;Kim, Kyekyoon (Kevin) 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 172 KB

## Abstract For the first time, selective‐area growth (SAG) technique has been developed using plasma‐assisted molecular beam epitaxy (PAMBE), enabling fabrication of a recessed‐gate structure for the metal‐semiconductor field‐effect transistor (MESFET) without etching. On patterned SiO~2~ samples,

Growth of AlxGa1—xN and Mg-Doped GaN Epi

Growth of AlxGa1—xN and Mg-Doped GaN Epilayers on Ga- and N-Faces of Bulk GaN Single Crystal Substrates by Molecular-Beam Epitaxy

✍ M. Konishi; T. Tanabe; S. Kubo; S. Kurai; T. Taguchi; K. Kainosho; A. Yokohata 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 221 KB 👁 2 views

a), T. Tanabe (a), S. Kubo (a), S. Kurai (a), T. Taguchi (a), K. Kainosho (b), and A. Yokohata (b)