𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Selective-area growth and fabrication of recessed-gate GaN MESFET using plasma-assisted molecular beam epitaxy

✍ Scribed by Hong, Seung Jae ;Chapman, Patrick ;Krein, Philip T. ;Kim, Kyekyoon (Kevin)

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
172 KB
Volume
203
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

For the first time, selective‐area growth (SAG) technique has been developed using plasma‐assisted molecular beam epitaxy (PAMBE), enabling fabrication of a recessed‐gate structure for the metal‐semiconductor field‐effect transistor (MESFET) without etching. On patterned SiO~2~ samples, polycrystalline GaN and single crystal n^+^‐GaN were observed to grow in the masked and unmasked regions, respectively. The regrown layers were analyzed using AFM. Ohmic contact formed on the n^+^‐GaN exhibited a vastly improved contact resistivity of 1.8 × 10^–8^ Ω cm^2^, giving rise to excellent device characteristics including a peak drain current of 360 mA/mm and a maximum transconductance of 46 mS/mm. The advantages of SAG were further investigated by comparing the dc characteristics of recessed‐gate and unrecessed MESFET. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

📜 SIMILAR VOLUMES

Nonalloyed ohmic contact of AlGaN/GaN HE
Nonalloyed ohmic contact of AlGaN/GaN HEMTs by selective area growth of single-crystal n+-GaN using plasma assisted molecular beam epitaxy
✍ Zheng, Zhi ;Seo, Huichan ;Pang, Liang ;Kim, Kyekyoon Kevin 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 404 KB

## Abstract Selective area growth (SAG) based on plasma assisted molecular beam epitaxy (PAMBE) was demonstrated to be effective to achieve low contact resistance for nonalloyed ohmic metals. An AlGaN/GaN high‐electron mobility transistor (HEMT) using SAG by PAMBE with nonalloyed ohmic metals and r

Growth and Characterization of InGaN/GaN
Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy
✍ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 101 KB 👁 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t