Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

✍ Scribed by Y. Cordier; F. Semond; J-C. Moreno; E. Frayssinet; B. Benbakhti; Z. Cao; S. Chenot; L. Nguyen; O. Tottereau; A. Soltani; K. Blary

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 526 KB
• Volume: 12
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2009.07.003