GaGdN/AlGaN multiple quantum disks grown by RF-plasma-assisted molecular-beam epitaxy

✍ Scribed by Tambo, H. ;Hasegawa, S. ;Uenaka, M. ;Zhou, Y. K. ;Emura, S. ;Asahi, H.

• Book ID: 105366032
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 186 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201000928

✦ Synopsis

Abstract

III–V‐based diluted magnetic semiconductor (DMS) GaGdN/AlGaN multiple quantum disks (MQDisks) were fabricated on Si (001) substrates with native silicon oxides by RF‐plasma‐assisted molecular‐beam epitaxy (RF‐MBE). It was found that the degree of the c‐axis orientation of GaGdN/AlGaN MQDisks and the Ga atomic configuration around Gd atom were improved due to the growth of AlGaN disks, comparing with the GaGdN nanorods grown without AlGaN disks. Additionally, GaGdN/AlGaN MQDisks showed larger saturation magnetisation than that of the GaGdN nanorods. With increasing the height of AlGaN disk, saturation magnetisation was increased.