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AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

✍ Scribed by V. N. Jmerik; A. M. Mizerov; T. V. Shubina; A. V. Sakharov; A. A. Sitnikova; P. S. Kop’ev; S. V. Ivanov; E. V. Lutsenko; A. V. Danilchyk; N. V. Rzheutskii; G. P. Yablonskii


Book ID
111444175
Publisher
Springer
Year
2008
Tongue
English
Weight
298 KB
Volume
42
Category
Article
ISSN
1063-7826

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## Abstract We report the fabrication of GaN/AlGaN nanocolumn LEDs on n‐(111) Si substrates by RF‐MBE for the first time. Clear diode characteristics with a turn‐on voltage of 4 V and an ultraviolet emission spectrum with a peak wavelength of 354 nm were observed at room temperature. When the Al co