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Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

✍ Scribed by Yitao Liao; Christos Thomidis; Chen-kai Kao; Adam Moldawer; Wei Zhang; Yi-chung Chang; A. Yu. Nikiforov; Enrico Bellotti; Theodore D. Moustakas


Book ID
112182916
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
205 KB
Volume
4
Category
Article
ISSN
1862-6254

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## Abstract We report the fabrication of GaN/AlGaN nanocolumn LEDs on n‐(111) Si substrates by RF‐MBE for the first time. Clear diode characteristics with a turn‐on voltage of 4 V and an ultraviolet emission spectrum with a peak wavelength of 354 nm were observed at room temperature. When the Al co