𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Photoluminescence properties ofp-type InGaAsN grown by RF plasma-assisted molecular beam epitaxy

✍ Scribed by S.Y. Xie; S.F. Yoon; S.Z. Wang

Book ID
106019702
Publisher
Springer
Year
2005
Tongue
English
Weight
697 KB
Volume
81
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

GaGdN/AlGaN multiple quantum disks grown
GaGdN/AlGaN multiple quantum disks grown by RF-plasma-assisted molecular-beam epitaxy
✍ Tambo, H. ;Hasegawa, S. ;Uenaka, M. ;Zhou, Y. K. ;Emura, S. ;Asahi, H. πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 186 KB

## Abstract III–V‐based diluted magnetic semiconductor (DMS) GaGdN/AlGaN multiple quantum disks (MQDisks) were fabricated on Si (001) substrates with native silicon oxides by RF‐plasma‐assisted molecular‐beam epitaxy (RF‐MBE). It was found that the degree of the __c__‐axis orientation of GaGdN/AlGa