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Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy

✍ Scribed by X. Wang; S. Che; Y. Ishitani; A. Yoshikawa

Book ID
121788046
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
673 KB
Volume
99
Category
Article
ISSN
0021-8979

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## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam