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Effects of film polarities on InN growth by molecular-beam epitaxy

โœ Scribed by Xu, K.; Yoshikawa, A.

Book ID
121361085
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
630 KB
Volume
83
Category
Article
ISSN
0003-6951

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## Abstract The surface kinetics of InN growth on GaN(0001) by plasma assisted molecular beam epitaxy was investigated. The surface coverage of the GaN(0001) surface by InN islands and the corresponding islands' growth rate along the [0001] direction, were studied as a function of substrate tempera